डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPW65R280C6 | Power Transistor FGK@?L
FTcP[ GgXST KTXR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a
=^^[FGKm =6
65*M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx65J280=6
>PcP KWTTc
Rev. 2.1 @X]P[
H^fTa FP]PVTT]c " Fd[cXPaZTc
,==:$&)G'=D3?*?/<@7@A= |
Infineon Technologies |
|
IPW65R280C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and r |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |