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Infineon Technologies |
Power Transistor G FD G K K =KE 9 C =K OA L ;@A F? 9 HHD A ;9 L A G FK=N=F E G J = => > A ;A =FL EG J = ;G E H9 ;L D A ?@L =J 9 F< ;G G D =J ;PL^_\P] X X X t # PL J =E =D QD G OD G K K =K |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switchi |
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