डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP60R080P7 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPP60R080P7,IIPP60R080P7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.08Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to |
INCHANGE |
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IPP60R080P7 | MOSFET IPP60R080P7
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principle |
Infineon |
www.DataSheet.in | 2017 | संपर्क |