डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP111N15N3 | Power-Transistor IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summar |
Infineon |
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IPP111N15N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPP111N15N3,IIPP111N15N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to |
INCHANGE |
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IPP111N15N3G | Power Transistor IPB108N15N3 G
IPP111N15N3 G IPI111N15N3 G
OptiMOS 3 Power-Transistor
TM
Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A
Features • N-channel, normal level • Excellent gate charge x R DS |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |