IPP093N06N3 डाटा शीट PDF( Datasheet )

IdQ IPB090N06N3 G IPP093N06N3 G "%&$!"#™3 Power-Transistor Features P6? ABH>3 A53 C9693 1C9? > 4A9E5B1>4 43 43 ,& ) , P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C ( &  P. 5AH A5B9BC1>3 5 R 9H

isc N-Channel MOSFET Transistor IPP093N06N3，IIPP093N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L

IdQ IPB090N06N3 G IPP093N06N3 G "%&$!"#™3 Power-Transistor Features P6? ABH>3 A53 C9693 1C9? > 4A9E5B1>4 43 43 ,& ) , P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C ( &  P. 5AH A5B9BC1>3 5 R 9H