IPP05CN10N डाटा शीट PDF( Datasheet )

IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V

isc N-Channel MOSFET Transistor IPP05CN10N，IIPP05CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L

IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V