IPP040N06N डाटा शीट PDF( Datasheet )

Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for t

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP040N06N，IIPP040N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche te

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N3，IIPP040N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t

IPP040N06N3G MOSFET OptiMOSª3Power-Transistor,60V Features •forsync.rectification,drivesanddc/dcSMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-cha

Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-re

IPP040N06NF2S MOSFET StrongIRFETTM2Power-Transistor Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Hal