डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPI60R099CP | Power-Transistor CoolMOSTM Power Transistor
Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applicati |
Infineon |
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IPI60R099CP | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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IPI60R099CPA | Power Transistor CoolMOSTM Power Transistor
Features • Worldwide best Rds,on in TO262 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoH |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |