IPI530N15N3 डाटा शीट PDF( Datasheet )

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤53mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)