IPD90R1K2C3 डाटा शीट PDF( Datasheet )

IPD90R1K2C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ

isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust