IPD640N06L डाटा शीट PDF( Datasheet )

OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plati

isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤64mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-f