IPD60R600P7 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPD60R600P7 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
|
| IPD60R600P7 | MOSFET IPD60R600P7
MOSFET
600VCoolMOSªP7PowerDevice
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleand |
 Infineon |
|
| IPD60R600P7S | Power-Transistor IPD60R600P7S
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principl |
Infineon |
|
| IPD60R600P7S | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus |
INCHANGE |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |