IPD60R600CP डाटा शीट PDF( Datasheet )

IPD60R600CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for ta

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust