डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R600C6 | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor IPx60R600C6
DataSheet
Rev.2.6 Final
PowerManagement&Multimarket
-''H 6YYV@BEc 6- CY`O[ F[KXS |
Infineon Technologies |
|
IPD60R600C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |