IPD60R1K4C6 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPD60R1K4C6 | Power Transistor GHL@?M
+ |
 Infineon Technologies |
|
| IPD60R1K4C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |