डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD050N10N5 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
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IPD050N10N5 | MOSFET IPD050N10N5
MOSFET
OptiMOSTM5Power-Transistor,100V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature |
Infineon |
www.DataSheet.in | 2017 | संपर्क |