IPD038N06N3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IPD038N06N3,IIPD038N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

IdQ "%&$!"#a # : A 0<& <,9=4=>: < 6LHZ[XLY P G3 5<<5>C71C5 3 81A75 G( 9H"[Z# @A? 4D3 C ( &  P. 5AH A5B9BC1>3 5 ( 9H"[Z# P' 3 81>>5< >? A=1<<5E5< P6? ABH>3 A53 C9693 1C9? > 4A9E5B1>4 43 43 ,&

IdQ "%&$!"#a # : A 0<& <,9=4=>: < 6LHZ[XLY P G3 5<<5>C71C5 3 81A75 G( 9H"[Z# @A? 4D3 C ( &  P. 5AH A5B9BC1>3 5 ( 9H"[Z# P' 3 81>>5< >? A=1<<5E5< P6? ABH>3 A53 C9693 1C9? > 4A9E5B1>4 43 43 ,