IPD036N04L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level

Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level