IPD033N06N डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

IPD033N06N MOSFET OptiMOSTMPower-Transistor,60V Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •Qualifiedaccor