IPD025N06N डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPD025N06N | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPD025N06N
DataSheet
Rev.2.5 Final
PowerManagement&Multimarket
1Description
Features
•Optimized |
 Infineon |
|
| IPD025N06N | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |