डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB123N10N3G | Power-Transistor IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C ope |
Infineon Technologies |
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IPB123N10N3G | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IPB123N10N3G
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |