IPB120N10S4-05 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IPB120N10S4-05 FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @VGS=10V ·100

IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS®-T2 Power-Transistor Product Summary VDS RDS(on),max (SMD version) Features ID • N-channel - Normal Level - Enhancement mode • AEC Q101 qualifi