IPB048N15N5 डाटा शीट PDF( Datasheet )

IPB048N15N5 MOSFET OptiMOSª5Power-Transistor,150V Features •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;R

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance an

IPB048N15N5LF MOSFET OptiMOSTM5LinearFET,150V Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •1