डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB039N10N3 | Power Transistor OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • High current capability • 175 °C operating tempera |
Infineon |
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IPB039N10N3G | Power-Transistor IPB039N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • High current capability • 175 °C op |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |