डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB027N10N3 | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IPB027N10N3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
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IPB027N10N3 | Power-Transistor IPB027N10N3 G
"%&$!"#®3 Power-Transistor
Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI G ? > B5C9CD1>3 5 R 9H"[Z#
Product Summary V 9H R 9H"[Z#$YMd I9
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Infineon |
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IPB027N10N3G | Power-Transistor IPB027N10N3 G
"%&$!"#®3 Power-Transistor
Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI G ? > B5C9CD1>3 5 R 9H"[Z#
Product Summary V 9H R 9H"[Z#$YMd I9
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|
Infineon |
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