डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPA60R800CE | MOSFET IPD60R800CE,IPA60R800CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneered |
Infineon Technologies |
|
IPA60R800CE | N-Channel MOSFET INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F Package ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max) ·100% avalanche tes |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |