IPA60R360P7 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPA60R360P7 | Power-Transistor IPA60R360P7
MOSFET
600VCoolMOSªP7PowerDevice
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleand |
 Infineon |
|
| IPA60R360P7 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPA60R360P7
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.36Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for |
 INCHANGE |
|
| IPA60R360P7S | Power-Transistor IPA60R360P7S
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principl |
Infineon |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |