डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IGT6E10 | Insulated Gate Bipolar Transistor mTMlJ~~~
Insulated Gate Bipolar Transistor
Preliminary 26.4 4/85
IGT6D10,E10
10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n
This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS· |
GE |
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IGT6E11 | Insulated Gate Bipolar Transistor | GE |
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IGT6E10 | Insulated Gate Bipolar Transistor | GE |
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