डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HYG210P06LQ1V | P-Channel Enhancement Mode MOSFET HYG210P06LQ1 D/U/V
P-Channel Enhancement Mode MOSFET
Feature
-60V/-40A RDS(ON)= 19mΩ(typ.)@VGS = -10V RDS(ON)= 25mΩ(typ.)@VGS = -4.5V
100% avalanche tested Reliable and Rugged Halogen Free a |
HOOYI |
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HYG210P06LQ1C2 | Single P-Channel Enhancement Mode MOSFET | HUAYI |
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HYG210P06LQ1U | P-Channel Enhancement Mode MOSFET | HOOYI |
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HYG210P06LQ1D | P-Channel Enhancement Mode MOSFET | HOOYI |
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HYG210P06LQ1V | P-Channel Enhancement Mode MOSFET | HOOYI |
www.DataSheet.in | 2017 | संपर्क |