डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HYG170ND03LR1S | Dual N-Channel MOSFET HYG170ND03LR1S
Dual N-Channel Enhancement Mode MOSFET
Feature
30V/9.5A RDS(ON)= 12.9 mΩ(typ.) @VGS = 10V RDS(ON)= 19.3 mΩ(typ.) @VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen |
HUAYI |
|
HYG170ND03LR1S | Dual N-Channel MOSFET | HUAYI |
www.DataSheet.in | 2017 | संपर्क |