डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HYG110P04LQ1C2 | Single P-Channel Enhancement Mode MOSFET HYG110P04LQ1C2
Single P-Channel Enhancement Mode MOSFET
Feature
-40V/-50A RDS(ON)= 8.9mΩ(typ.) @VGS = -10V
RDS(ON)= 13mΩ(typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halo |
HUAYI |
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HYG110P04LQ1C2 | Single P-Channel Enhancement Mode MOSFET | HUAYI |
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