डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HYG072N10LS1S | N-Channel Enhancement Mode MOSFET HYG072N10LS1S
Feature
100V/14A RDS(ON)= 7.2 mΩ(typ.) @ VGS = 10V RDS(ON)= 10 mΩ(typ.) @ VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available
(RoHS Compliant)
N |
HUAYI |
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HYG072N10LS1S | N-Channel Enhancement Mode MOSFET | HUAYI |
www.DataSheet.in | 2017 | संपर्क |