डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HYG053N10NS1P | N-Channel MOSFET HYG053N10NS1P/B
Feature
100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET Pin |
HUAYI |
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HYG053N10NS1B | N-Channel MOSFET | HUAYI |
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HYG053N10NS1U | N-Channel MOSFET | ChipSourceTek |
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HYG053N10NS1D | N-Channel MOSFET | ChipSourceTek |
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HYG053N10NS1V | N-Channel MOSFET | ChipSourceTek |
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HYG053N10NS1P | N-Channel MOSFET | HUAYI |
www.DataSheet.in | 2017 | संपर्क |