डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HY3906 | N-Channel MOSFET HY3906P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/190A
RDS(ON) = 3.2 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Complian |
HOOYI |
|
HY3906B | N-Channel MOSFET HY3906P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/190A
RDS(ON) = 3.2 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Complian |
HOOYI |
|
HY3906P | N-Channel MOSFET HY3906P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/190A
RDS(ON) = 3.2 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Complian |
HOOYI |
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