डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HY3610P | N-Channel Enhancement Mode MOSFET HY3610P
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 100V/160A
RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Availab |
HOOYI |
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HY3610P | N-Channel Enhancement Mode MOSFET | HOOYI |
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