डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HY3306B | N-Channel Enhancement Mode MOSFET HY3306P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/130A
RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Complian |
HOOYI |
|
HY3306P | N-Channel Enhancement Mode MOSFET | HOOYI |
|
HY3306B | N-Channel Enhancement Mode MOSFET | HOOYI |
www.DataSheet.in | 2017 | संपर्क |