डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HY3210PS | N-Channel Enhancement Mode MOSFET HY3210P/M/B/PS/PM
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement |
HOOYI |
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HY3210P | N-Channel Enhancement Mode MOSFET | HOOYI |
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HY3210PM | N-Channel Enhancement Mode MOSFET | HOOYI |
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HY3210PS | N-Channel Enhancement Mode MOSFET | HOOYI |
www.DataSheet.in | 2017 | संपर्क |