डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HM6N10 | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
Description
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Gen |
H&M Semiconductor |
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HM6N10PR | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
Description
The HM6N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
G |
H&M Semiconductor |
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HM6N10R | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
Description
The HM6N10R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Ge |
H&M Semiconductor |
www.DataSheet.in | 2017 | संपर्क |