| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) • Single 3.3 V supply: 3.3 V ± 0.3 V • Access time: 55/70 ns (max) • Power dissipation Active: 16.5 mW/MHz (typ) Standby: 3.3 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data inp |
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Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) • Single 3.3 V supply: 3.3 V ± 0.3V • Access time: 70/85 ns (max) • Power dissipation Active: 16.5 mW/MHz (typ) Standby: 3.3 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data inpu |
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