| No. | Partie # | Fabricant | Description | Fiche Technique |
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H&M semi |
ultra sensitive hall effect switch Wide operating voltage, 2~5V micro power Operating with North or South pole Superior temperature stability Extremely Low Switch-point Drift ESD（HBM）6000V Small package size Application PDA, IPAD Cellular phone Function Block Diagr |
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Hitachi |
256K High Speed SRAM • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns (max) • Low power Operation: 300 mW (typ) Standby: 100 µW (typ) 30 µW (typ) (L-version) • Completely static memory required, no clock or timing strobe requi |
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