डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HM4447 | P-Channel Enhancement Mode Power MOSFET Description
The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management.
General Features
● VDS = -30V,ID = -25A RDS(ON) <9m� |
H&M Semiconductor |
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HM4447 | P-Channel Enhancement Mode Power MOSFET | H&M Semiconductor |
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