HM2310PR डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
HM2310PR	N-Channel Enhancement Mode Power MOSFET M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection	H&M Semiconductor	PDF
HM2310PR	N-Channel Enhancement Mode Power MOSFET	H&M Semiconductor	PDF

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