HM2310 डाटा शीट PDF( Datasheet )

HM2310 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device

HM2310B N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-de

HM& N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-d

M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection