HM2309 डाटा शीट PDF( Datasheet )

HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density p

HM2309A P-Channel Enhancement Mode Power MOSFET Description The HM2309A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a loa

P-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switc

HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density

+0& P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high