HM2302B डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| HM2302B | N-Channel Trench Power MOSFET N-Channel Trench Power MOSFET
General Description
The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitab |
 H&M Semiconductor |
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| HM2302BJR | N-Channel Enhancement Mode Power MOSFET J HM2302BJR
SOT-723 Plastic-Encapsulate MOSFETS
HM2302BJR N-Channel MOSFET
V(BR)DSS
20 V
RDS(on)MAX
380mΩ@ 4.5V 450mΩ@ 2.5V
800mΩ@1.8V
ID
0.75A
SOT-723
1. GATE 2. SOURCE 3. DRAIN
FEATURES z |
H&M Semiconductor |
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| HM2302BKR | N-Channel Enhancement Mode Power MOSFET .3(18
N-Channel 20V (D-S) MOSFET
GENERAL DESCRIPTION
The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This |
H&M Semiconductor |
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| HM2302BSR | N-Channel Enhancement Mode Power MOSFET .3(98
1&KDQQHO9 '6 026)(7
GENERAL DESCRIPTION
The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This |
H&M Semiconductor |
शेयर लिंक :
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