HM2302 डाटा शीट PDF( Datasheet )

HM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device

数字温湿度传感器 HM2302 产品手册 一、产品概述 HM2302 湿敏电容数字温湿度传感器是一款含有己校准数字信号输出的温湿度复合型传感器。采 用专用的温湿度�

HM2302A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic

N-Channel Trench Power MOSFET General Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitab

J HM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET V(BR)DSS 20 V RDS(on)MAX   380mΩ@ 4.5V  450mΩ@ 2.5V  800mΩ@1.8V   ID 0.75A SOT-723 1. GATE 2. SOURCE 3. DRAIN FEATURES z

.3(18 N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This

.3(98 1&KDQQHO9'6026)(7 GENERAL DESCRIPTION The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This