| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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H&M Semiconductor |
P-Channel 20V (D-S) MOSFET ● RDS(ON)= 0.48Ω @VGS=-4.5V ● RDS(ON)= 0.67Ω @VGS=-2.5V ● RDS(ON)= 0.95Ω @VGS=-1.8V ● RDS(ON)= 2.20Ω @VGS=-1.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing C |
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H&M Semiconductor |
P-Channel 20V (D-S) MOSFET ● RDS(ON)= 0.48Ω @VGS=-4.5V ● RDS(ON)= 0.67Ω @VGS=-2.5V ● RDS(ON)= 0.95Ω @VGS=-1.8V ● RDS(ON)= 2.20Ω @VGS=-1.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing C |
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