HM2301B डाटा शीट PDF( Datasheet )

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This devic

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary RDS(on)(Ω ) ID(mA) 0.45@ VGS=-4.5V 0.62@ VGS=-2.5V -800

HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This

HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This