डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HM2300 | N-Channel Enhancement Mode Power MOSFET HM2300
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device |
H&M Semiconductor |
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HM2300B | N-Channel Enhancement Mode Power MOSFET HM2300B
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic |
H&M Semiconductor |
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HM2300C | N-Channel Enhancement Mode Power MOSFET HM2300C
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic |
H&M Semiconductor |
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HM2300D | N-Channel Enhancement Mode Power MOSFET HM2300D
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic |
H&M Semiconductor |
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HM2300DR | N-Channel Enhancement Mode Power MOSFET HM2300DR
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev |
H&M Semiconductor |
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HM2300PR | N-Channel Enhancement Mode Power MOSFET HM2300PR
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev |
H&M Semiconductor |
www.DataSheet.in | 2017 | संपर्क |