HLB123D डाटा शीट PDF( Datasheet )

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/5 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high v

isc Silicon NPN Power Transistor DESCRIPTION ·High voltage ·High speed switching ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable op